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Amir Farajian
Phone: 937-775-2619
Email:
Education:
Ph.D., Materials Science, Tohoku University, Japan, 1999
M.S., Solid State Physics, Isfahan University of Technology, Iran, 1994
B.S., Electrical Engineering, Sharif University of Technology, Iran, 1991
Research Interests:
Computational nanoscience: nanostructured materials, quantum transport, molecular dynamics, nanoelectromechanical systems, nanosensors
Recent Publications:
1) "A. A. Farajian, O. V. Pupysheva, H. K. Schmidt, and B. I. Yakobson, "Polarization, energetics and electrorheology in nanotube suspensions under an applied electric field: An exact numerical approach", Phys. Rev. B 77, 205432 (2008)
2) O. V. Pupysheva, A. A. Farajian, and B. I. Yakobson, "Fullerene nanocage capacity for hydrogen storage", Nano Lett. 8, 767 (2008)
3) A. Sadrzadeh, A. A. Farajian, and B. I. Yakobson, "Electron transport of nanotube-based gas sensors: An ab initio study", Appl. Phys. Lett. 92, 022103 (2008)
4) A. A. Farajian, R. V. Belosludov, H. Mizuseki, Y. Kawazoe, T. Hashizume, and B. I. Yakobson, "Switching and negative differential resistance in a single-molecule transistor: Emergence of fixed and shifting states with molecular length", J. Chem. Phys. 127, 024901 (2007)
Honors & Awards:
Curriculum Vitae
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